Efficient continuous-wave lasing operation of a narrow-stripe oxide-confined GaInNAs-GaAs multiquantum-well laser grown by MOCVD

Efficient continuous-wave lasing operation of a narrow-stripe oxide-confined GaInNAs-GaAs multiquantum-well laser grown by MOCVD

Efficient continuous-wave lasing operation has been achieved above room temperature by a triple-quantum-well GaInNAs-GaAs laser diode grown on a 6/spl deg/-misoriented GaAs substrate by MOCVD. Using a planar, oxide-confined, narrow-stripe (8 μm) laser geometry, continuous-wave lasing operation was a...

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Veröffentlicht in:IEEE photonics technology letters 2000-01, Vol.12 (1), p.7-9
Hauptverfasser: Kai Yang, Hains, C.P., Cheng, J.
Format: Artikel
Sprache:eng
Schlagworte:
Chemical lasers
Density
Diode lasers
Gallium arsenide
Laser diodes
Lasers
Lasing
MOCVD
Photonics
Quantum well lasers
Substrates
Surface emitting lasers
Temperature distribution
Threshold current
Threshold currents
Vertical cavity surface emitting lasers
Wavelengths
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Zusammenfassung:Efficient continuous-wave lasing operation has been achieved above room temperature by a triple-quantum-well GaInNAs-GaAs laser diode grown on a 6/spl deg/-misoriented GaAs substrate by MOCVD. Using a planar, oxide-confined, narrow-stripe (8 μm) laser geometry, continuous-wave lasing operation was achieved over a wide range of temperatures up to 57/spl deg/C. At room temperature, lasing occurs at a wavelength of 1.16 μm, with a high single-facet slope efficiency of 25% and a threshold current density of 1.3 kA/cm 2 .
ISSN:1041-1135
1941-0174
DOI:10.1109/68.817429