Development of low-k precursors for next generation IC manufacturing

The effect of the ligand structure in carbosilane chains with formula R1R2R3–Si–CxH2x–Si–R4R5R6 with x=1, 2 and R=H, Me, OEt is studied. The thermal characterization of the molecules as well as film characteristics is presented. It has been observed that partial incorporation of the carbon chain improves the mechanical properties of the film over commercial solutions. The optimization of the ligand choice enables to fine tune the film properties such as the dielectric constant, carbon content and mechanical properties.