MCs+ depth profiling using cluster primary ions

The emission of Cs+ and MCs+ ions from various materials like Si, Al, Ti, Fe and Zn under Bi1 and C60 cluster bombardment is studied in the TOF‐SIMS dual‐beam mode with low‐energy Cs sputtering. High yield enhancements up to 2000 are observed for C60 primary ions, in particular for materials with lo...

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Veröffentlicht in:	Surface and interface analysis 2011-01, Vol.43 (1-2), p.204-206
Hauptverfasser:	Niehuis, E., Grehl, T., Kollmer, F., Moellers, R., Rading, D., Kersting, R., Hagenhoff, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Atomic, molecular, and ion beam impact and interactions with surfaces bismuth Buckminsterfullerene C60 Chemical composition analysis, chemical depth and dopant profiling cluster primary ions Clusters Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Depth profiling dual-beam depth profiling Electron and ion emission by liquids and solids impact phenomena Exact sciences and technology Fullerenes Impact phenomena (including electron spectra and sputtering) Ionization Materials science Materials testing MCs depth profiling Physics quantitative analysis Secondary ion mass spectrometry Titanium
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