MCs+ depth profiling using cluster primary ions

The emission of Cs+ and MCs+ ions from various materials like Si, Al, Ti, Fe and Zn under Bi1 and C60 cluster bombardment is studied in the TOF‐SIMS dual‐beam mode with low‐energy Cs sputtering. High yield enhancements up to 2000 are observed for C60 primary ions, in particular for materials with low sputter yields at high Cs surface concentration. The results indicate a significant improvement in the Cs+ ionization probabilities for C60 in the case of a work function smaller than the ionization potential of Cs. High, and rather uniform MCs+ yields, can be achieved for the different materials, and depth profiling using cluster primary ions has a significant potential for quantitative SIMS analysis. Copyright © 2010 John Wiley & Sons, Ltd.