Failure analysis of fine Cu patterning by shave-off profiling

We focused on failure within fine copper patterning on a semiconductor chip. Three grades of samples were prepared; hard CMP treatment, soft CMP treatment and standard, and compared the differences by shave‐off profiling. The shave‐off profiles of CMP treatment revealed a saw‐toothed structure, and...

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Veröffentlicht in:	Surface and interface analysis 2011-01, Vol.43 (1-2), p.621-624
Hauptverfasser:	Nojima, M., Fujii, M., Kakuhara, Y., Tsuchiya, H., Kameyama, A., Yokogawa, S., Owari, M., Nihei, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic, molecular, and ion beam impact and interactions with surfaces Chemical-mechanical polishing CHIPS CMP Condensed matter: electronic structure, electrical, magnetic, and optical properties Copper Cross-disciplinary physics: materials science rheology Electron and ion emission by liquids and solids impact phenomena Exact sciences and technology FAILURE FIB Impact phenomena (including electron spectra and sputtering) Interface analysis Materials science Patterning Physics POLISHING Profiling SEMICONDUCTORS shave-off SIMS Surface treatments
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Beschreibung
Zusammenfassung:	We focused on failure within fine copper patterning on a semiconductor chip. Three grades of samples were prepared; hard CMP treatment, soft CMP treatment and standard, and compared the differences by shave‐off profiling. The shave‐off profiles of CMP treatment revealed a saw‐toothed structure, and the shave‐off profile of a standard chip was revealed as a periodic triangular wave. The difference can be explained by the existence of residue on the CMP process. Copyright © 2010 John Wiley & Sons, Ltd.
ISSN:	0142-2421 1096-9918 1096-9918
DOI:	10.1002/sia.3396