Analytical-Numerical Model for the Cut off Frequency of AlGaN/GaN High Electron Mobility Transistors

An analytical- numerical model for current - voltage characteristics of AlGaN/GaN based high electron mobility transistors has been developed that is capable to predict accurately effects of depletion layer thickness on the cut off frequency in drain currents and gate lengths, transconductance, drai...

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Veröffentlicht in:	Journal of materials science and engineering. B 2011-07, Vol.1 (2), p.190-199
Hauptverfasser:	Yahyazadeh, R, Hashempour, Z
Format:	Artikel
Sprache:	eng
Schlagworte:	Cut off Drains Gallium nitrides Gates High electron mobility transistors Mathematical analysis Mathematical models Semiconductor devices
Online-Zugang:	Volltext
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