Analytical-Numerical Model for the Cut off Frequency of AlGaN/GaN High Electron Mobility Transistors

An analytical- numerical model for current - voltage characteristics of AlGaN/GaN based high electron mobility transistors has been developed that is capable to predict accurately effects of depletion layer thickness on the cut off frequency in drain currents and gate lengths, transconductance, drain source and gate source capacitance. Salient features of the model are incorporated of fully and partially occupied sub-bands in the interface quantum well, combined with a self-consistent solution of the Schroedinger and Poisson equations and including the effects of the temperature, virtual gate and electron trap states. The results of the model are in very good agreement with existing experimental data for AlGaN/GaN based high electron mobility transistors device.