Flexible Control of Block Copolymer Directed Self-Assembly using Small, Topographical Templates: Potential Lithography Solution for Integrated Circuit Contact Hole Patterning

Block copolymer directed self‐assembly (DSA) using small guiding templates for contact hole patterning in integrated circuits is reported. Flexible and precise DSA control of 25 nm contact holes guided by 66 nm templates for industry‐standard 22 nm static random access memory cells is experimentally demonstrated. For 22 nm random logic circuits a DSA‐aware design methodology is developed and the contact holes are achieved with a critical dimension of 15 nm and overylay accuracy of 1 nm.