Influence of ion irradiation on internal residual stress in DLC films

The dependence of internal residual stress in thin diamond-like carbon films grown on Si substrate by PECVD technique on most important growth parameters, namely RF-power, DC bias voltage and substrate temperature, is described. Results show that compressive stress reaches the highest value of 2.7 GPa at low RF-power and DC bias. Increase of substrate temperature from 250 to 350 °C leads to nonlinear increase of stress value. Inhomogeneity of residual stress along the film surface disappears when film is deposited at temperatures above 275 °C. Post-growth film irradiation by P + and In + ions cause decrease of compressive stress followed by its inversion to tensile. For all ion energy combinations used residual stress changes linearly with normalized fluence up to 0.2 DPA with slope (8.7 ± 1.3) GPa/DPA.