Anisotropic growth of titanium disilicide nanocrystals on Si(113) surface

Growth of titanium disilicide (TiSi2) particles on a Ti-deposited Si(113) surface was observed with a scanning tunneling microscope. The direction of the particle growth was specifically related to the anisotropy of the high-index surface. The particles were identified as C54 nano-crystals, and their orientation was determined from the morphology of the silicide facets. The Si(113)-specific growth orientation is explained in terms of the lattice mismatch between C54 TiSi2 and the reconstructed surface structure. [Display omitted] ► Microscopic images of Ti-deposited Si(113) surfaces are presented at the atomic scale. ► The anisotropic growth of silicide particles is specific to the Si(113) surface. ► The growth mechanism on this surface is different from (001) and (111) surfaces. ► Lattice mismatch between TiSi2 and the reconstructed surface structure is crucial. ► The findings present usefulness of high-index surfaces for fabrication on silicon.