Low resistive tungsten dual poly-metal gates with multi-diffusion barrier metals in high performance memory devices

Ideal barrier metal arrangements in tungsten dual poly-metal (W/barrier metals/dual poly-Si) gates were developed for high performance, low-power and high density-memory devices. An additional metallic amorphous layer, such as TiN/WSix/WN, inserted at the diffusion barrier metals of Ti/WN resulted i...

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Veröffentlicht in:	Solid-state electronics 2012-03, Vol.69, p.22-26
Hauptverfasser:	Sung, Min-Gyu, Kim, Yong Soo, Kim, Sook Joo, Jeong, Ii-Kyo, Choi, Hak-Soon, Kim, Moon-Su, Kim, Heonho, Park, Sung-Ki
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Barriers Circuit properties Contact Data storage Delay Diffusion barrier metal Dual poly-metal gate Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gates Low resistivity tungsten Magnetic and optical mass memories Memory devices Oscillators Oscillators, resonators, synthetizers Ring oscillator signal delay Storage and reproduction of information Tungsten
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Beschreibung
Zusammenfassung:	Ideal barrier metal arrangements in tungsten dual poly-metal (W/barrier metals/dual poly-Si) gates were developed for high performance, low-power and high density-memory devices. An additional metallic amorphous layer, such as TiN/WSix/WN, inserted at the diffusion barrier metals of Ti/WN resulted in both a low gate contact (Rc) and sheet resistance (Rs), which may result in superior improvement of the ring oscillator delay characteristics.
ISSN:	0038-1101 1879-2405
DOI:	10.1016/j.sse.2011.09.003