Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction

Interfacial misfit dislocation in AlxGa1−xN/GaN heterojunction was studied as a function of barrier layer thickness and lattice mismatch degree. The sheet charge density induced by interfacial dislocation was obtained. Based on the interfacial dislocation model, the mobility was calculated in two-dimensional electron gas channel. It was found that the mobility was dominated by the interfacial dislocation scattering at low temperature, and depended on the barrier layer thickness and lattice mismatch degree. ► Interfacial misfit dislocation in AlxGa1−xN/GaN heterojunction was studied. ► The sheet charge density induced by interfacial dislocation was obtained. ► The mobility limited by interfacial dislocation was calculated. ► The mobility was dominated by interfacial dislocation scattering at low temperature.