Structural features of high purity silicon prepared by electron-beam refining of metallurgical-grade silicon

A study of the structure of high purity polycrystalline silicon, prepared by electron beam refining of metallurgical-grade silicon in a vacuum is provided. Results of the study point to sensitivity of impurity particle growth and dimensions to metallurgical-grade silicon refining method (vacuum or oxidation), in contrast to crystallite dimensions. There is also almost total absence of impurity segregation towards grain boundaries during silicon crystallization from a melt.