High-Efficiency, Microscale GaN Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

A method for forming efficient, ultrathin GaN light‐emitting diodes (LEDs) and for their assembly onto foreign substances is reported. The LEDs have lateral dimensions ranging from ∼1 mm × 1 mm to ∼25 μm × 25 μm. Quantitative experimental and theoretical studies show the benefits of small device geo...

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Veröffentlicht in:	Small (Weinheim an der Bergstrasse, Germany) Germany), 2012-06, Vol.8 (11), p.1643-1649
Hauptverfasser:	Kim, Tae-il, Jung, Yei Hwan, Song, Jizhou, Kim, Daegon, Li, Yuhang, Kim, Hoon-sik, Song, Il-Sun, Wierer, Jonathan J., Pao, Hsuan An, Huang, Yonggang, Rogers, John A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Electronics - instrumentation flexible electronics Gallium - chemistry gallium nitride laser lift-off (LLO) light-emitting diodes Lighting - instrumentation Nanotechnology - instrumentation transfer printing
Online-Zugang:	Volltext
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