High-Efficiency, Microscale GaN Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

High-Efficiency, Microscale GaN Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

A method for forming efficient, ultrathin GaN light‐emitting diodes (LEDs) and for their assembly onto foreign substances is reported. The LEDs have lateral dimensions ranging from ∼1 mm × 1 mm to ∼25 μm × 25 μm. Quantitative experimental and theoretical studies show the benefits of small device geo...

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2012-06, Vol.8 (11), p.1643-1649
Hauptverfasser: Kim, Tae-il, Jung, Yei Hwan, Song, Jizhou, Kim, Daegon, Li, Yuhang, Kim, Hoon-sik, Song, Il-Sun, Wierer, Jonathan J., Pao, Hsuan An, Huang, Yonggang, Rogers, John A.
Format: Artikel
Sprache:eng
Schlagworte:
Electronics - instrumentation
flexible electronics
Gallium - chemistry
gallium nitride
laser lift-off (LLO)
light-emitting diodes
Lighting - instrumentation
Nanotechnology - instrumentation
transfer printing
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Zusammenfassung:A method for forming efficient, ultrathin GaN light‐emitting diodes (LEDs) and for their assembly onto foreign substances is reported. The LEDs have lateral dimensions ranging from ∼1 mm × 1 mm to ∼25 μm × 25 μm. Quantitative experimental and theoretical studies show the benefits of small device geometry on thermal management, for both continuous and pulsed‐mode operation, the latter of which suggests the potential use of these technologies in bio‐integrated contexts.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201200382