Highly Efficient Single-Layer Polymer Ambipolar Light-Emitting Field-Effect Transistors

Highly Efficient Single-Layer Polymer Ambipolar Light-Emitting Field-Effect Transistors

Single‐layer polymer light‐emitting field‐effect transistors (LEFETs) that yield EQEs of >8% and luminance efficiencies >28 cd A−1 are demonstrated. These values are the highest reported for LEFETs and amongst the highest values for fluorescent OLEDs. Due to the electrostatics of the ambipolar...

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Veröffentlicht in:Advanced materials (Weinheim) 2012-05, Vol.24 (20), p.2728-2734
Hauptverfasser: Gwinner, Michael C., Kabra, Dinesh, Roberts, Matthew, Brenner, Thomas J. K., Wallikewitz, Bodo H., McNeill, Christopher R., Friend, Richard H., Sirringhaus, Henning
Format: Artikel
Sprache:eng
Schlagworte:
Charge-induced absorption
Efficiency
Light
Light emission
Organic field-effect transistors
Organic semiconductors
Polymers - chemistry
Polymethyl Methacrylate - chemistry
Transistors, Electronic
Zinc Oxide - chemistry
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Zusammenfassung:Single‐layer polymer light‐emitting field‐effect transistors (LEFETs) that yield EQEs of >8% and luminance efficiencies >28 cd A−1 are demonstrated. These values are the highest reported for LEFETs and amongst the highest values for fluorescent OLEDs. Due to the electrostatics of the ambipolar LEFET channel, LEFETs provide an inherent advantage over OLEDs in terms of minimizing exciton‐polaron quenching.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201104602