Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays
The photoresponse characteristics of metal‐oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous‐Si‐based photo‐TFT, the MeO photo‐TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stop...
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Veröffentlicht in: | Advanced materials (Weinheim) 2012-05, Vol.24 (19), p.2631-2636 |
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creator | Ahn, Seung-Eon Song, Ihun Jeon, Sanghun Jeon, Youg Woo Kim, Young Kim, Changjung Ryu, Byungki Lee, Je-Hun Nathan, Arokia Lee, Sungsik Kim, Gyu Tae Chung, U-In |
description | The photoresponse characteristics of metal‐oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous‐Si‐based photo‐TFT, the MeO photo‐TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stopped, a unique sensing scheme suitable for the high‐speed array operation is used, yet maintaining a simple array architecture as a solution for large‐area interactive displays. |
doi_str_mv | 10.1002/adma.201200293 |
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subjects | amorphous oxide semiconductors In-Ga-Zn-O/In-Zn-O Light Metals - chemistry Oxides - chemistry phototransistors remote in-cell touch Semiconductors thin film transistors |
title | Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays |
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