Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays

The photoresponse characteristics of metal‐oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous‐Si‐based photo‐TFT, the MeO photo‐TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stop...

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Veröffentlicht in:Advanced materials (Weinheim) 2012-05, Vol.24 (19), p.2631-2636
Hauptverfasser: Ahn, Seung-Eon, Song, Ihun, Jeon, Sanghun, Jeon, Youg Woo, Kim, Young, Kim, Changjung, Ryu, Byungki, Lee, Je-Hun, Nathan, Arokia, Lee, Sungsik, Kim, Gyu Tae, Chung, U-In
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container_end_page 2636
container_issue 19
container_start_page 2631
container_title Advanced materials (Weinheim)
container_volume 24
creator Ahn, Seung-Eon
Song, Ihun
Jeon, Sanghun
Jeon, Youg Woo
Kim, Young
Kim, Changjung
Ryu, Byungki
Lee, Je-Hun
Nathan, Arokia
Lee, Sungsik
Kim, Gyu Tae
Chung, U-In
description The photoresponse characteristics of metal‐oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous‐Si‐based photo‐TFT, the MeO photo‐TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stopped, a unique sensing scheme suitable for the high‐speed array operation is used, yet maintaining a simple array architecture as a solution for large‐area interactive displays.
doi_str_mv 10.1002/adma.201200293
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source MEDLINE; Wiley Blackwell Single Titles
subjects amorphous oxide semiconductors
In-Ga-Zn-O/In-Zn-O
Light
Metals - chemistry
Oxides - chemistry
phototransistors
remote in-cell touch
Semiconductors
thin film transistors
title Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays
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