Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays

The photoresponse characteristics of metal‐oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous‐Si‐based photo‐TFT, the MeO photo‐TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stop...

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Veröffentlicht in:	Advanced materials (Weinheim) 2012-05, Vol.24 (19), p.2631-2636
Hauptverfasser:	Ahn, Seung-Eon, Song, Ihun, Jeon, Sanghun, Jeon, Youg Woo, Kim, Young, Kim, Changjung, Ryu, Byungki, Lee, Je-Hun, Nathan, Arokia, Lee, Sungsik, Kim, Gyu Tae, Chung, U-In
Format:	Artikel
Sprache:	eng
Schlagworte:	amorphous oxide semiconductors In-Ga-Zn-O/In-Zn-O Light Metals - chemistry Oxides - chemistry phototransistors remote in-cell touch Semiconductors thin film transistors
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Beschreibung
Zusammenfassung:	The photoresponse characteristics of metal‐oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous‐Si‐based photo‐TFT, the MeO photo‐TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stopped, a unique sensing scheme suitable for the high‐speed array operation is used, yet maintaining a simple array architecture as a solution for large‐area interactive displays.
ISSN:	0935-9648 1521-4095
DOI:	10.1002/adma.201200293