Low dose measurement with thick gate oxide MOSFETs
The low dose limit and the accuracy of high sensitivity MOS ionizing radiation dosimeters fabricated at LAAS-CNRS are investigated. ► Low dose limit of thick-oxide Metal-Oxide-Semiconductor dosimeters is investigated. ► Influence of read-time instability, electronic noise, temperature variation and...
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| Veröffentlicht in: | Radiation physics and chemistry (Oxford, England : 1993) England : 1993), 2012-03, Vol.81 (3), p.339-344 |
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| container_end_page | 344 |
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| container_title | Radiation physics and chemistry (Oxford, England : 1993) |
| container_volume | 81 |
| creator | Sarrabayrouse, G. Siskos, S. |
| description | The low dose limit and the accuracy of high sensitivity MOS ionizing radiation dosimeters fabricated at LAAS-CNRS are investigated.
► Low dose limit of thick-oxide Metal-Oxide-Semiconductor dosimeters is investigated. ► Influence of read-time instability, electronic noise, temperature variation and calibration is considered. ► It is concluded that such sensors can operate in the mGy range with acceptable accuracy. |
| doi_str_mv | 10.1016/j.radphyschem.2011.11.020 |
| format | Article |
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► Low dose limit of thick-oxide Metal-Oxide-Semiconductor dosimeters is investigated. ► Influence of read-time instability, electronic noise, temperature variation and calibration is considered. ► It is concluded that such sensors can operate in the mGy range with acceptable accuracy.</description><subject>Accuracy</subject><subject>Dosimeters</subject><subject>Gates</subject><subject>Ionizing radiation</subject><subject>Low dose</subject><subject>Metal oxide semiconductors</subject><subject>MOS radiation dosimeter</subject><subject>MOSFETs</subject><subject>Noise</subject><subject>Oxides</subject><subject>Read-time instability</subject><subject>Temperature</subject><issn>0969-806X</issn><issn>1879-0895</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqNkE9LAzEQxYMoWKvfId687JpsNtndoxT_QaUHFbyFJDtxU7vdNUmt_fam1INHhwcDw-8NvIfQJSU5JVRcL3Ov2rHbBdNBnxeE0jyJFOQITWhdNRmpG36MJqQRTVYT8XaKzkJYEkKqmrMJKubDFrdDANyDChsPPawj3rrY4dg584HfVQQ8fLsW8NPi-e72JZyjE6tWAS5-9xS9pvPsIZsv7h9nN_PMMF7GjAJrmC2tqFtDeWm1rpQWvOTUGkVaaitFa6sMY1qLokpjtK20YCVtlAbCpujq8Hf0w-cGQpS9CwZWK7WGYRNkyp_CUV6LhDYH1PghBA9Wjt71yu8StOeEXMo_Pcl9TzIp9ZS8s4MXUpYvB14G42BtoHUeTJTt4P7x5QeOGHby</recordid><startdate>20120301</startdate><enddate>20120301</enddate><creator>Sarrabayrouse, G.</creator><creator>Siskos, S.</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7SU</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20120301</creationdate><title>Low dose measurement with thick gate oxide MOSFETs</title><author>Sarrabayrouse, G. ; Siskos, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c354t-1e393f4f68dc154fbb7ab65451fca0d1f7a18fac33bb627777cbf7b63419abe03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Accuracy</topic><topic>Dosimeters</topic><topic>Gates</topic><topic>Ionizing radiation</topic><topic>Low dose</topic><topic>Metal oxide semiconductors</topic><topic>MOS radiation dosimeter</topic><topic>MOSFETs</topic><topic>Noise</topic><topic>Oxides</topic><topic>Read-time instability</topic><topic>Temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sarrabayrouse, G.</creatorcontrib><creatorcontrib>Siskos, S.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Environmental Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Radiation physics and chemistry (Oxford, England : 1993)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sarrabayrouse, G.</au><au>Siskos, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low dose measurement with thick gate oxide MOSFETs</atitle><jtitle>Radiation physics and chemistry (Oxford, England : 1993)</jtitle><date>2012-03-01</date><risdate>2012</risdate><volume>81</volume><issue>3</issue><spage>339</spage><epage>344</epage><pages>339-344</pages><issn>0969-806X</issn><eissn>1879-0895</eissn><abstract>The low dose limit and the accuracy of high sensitivity MOS ionizing radiation dosimeters fabricated at LAAS-CNRS are investigated.
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| ispartof | Radiation physics and chemistry (Oxford, England : 1993), 2012-03, Vol.81 (3), p.339-344 |
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| language | eng |
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| source | Access via ScienceDirect (Elsevier) |
| subjects | Accuracy Dosimeters Gates Ionizing radiation Low dose Metal oxide semiconductors MOS radiation dosimeter MOSFETs Noise Oxides Read-time instability Temperature |
| title | Low dose measurement with thick gate oxide MOSFETs |
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