Low dose measurement with thick gate oxide MOSFETs

The low dose limit and the accuracy of high sensitivity MOS ionizing radiation dosimeters fabricated at LAAS-CNRS are investigated. ► Low dose limit of thick-oxide Metal-Oxide-Semiconductor dosimeters is investigated. ► Influence of read-time instability, electronic noise, temperature variation and...

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Veröffentlicht in:	Radiation physics and chemistry (Oxford, England : 1993) England : 1993), 2012-03, Vol.81 (3), p.339-344
Hauptverfasser:	Sarrabayrouse, G., Siskos, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Accuracy Dosimeters Gates Ionizing radiation Low dose Metal oxide semiconductors MOS radiation dosimeter MOSFETs Noise Oxides Read-time instability Temperature
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The low dose limit and the accuracy of high sensitivity MOS ionizing radiation dosimeters fabricated at LAAS-CNRS are investigated. ► Low dose limit of thick-oxide Metal-Oxide-Semiconductor dosimeters is investigated. ► Influence of read-time instability, electronic noise, temperature variation and calibration is considered. ► It is concluded that such sensors can operate in the mGy range with acceptable accuracy.
ISSN:	0969-806X 1879-0895
DOI:	10.1016/j.radphyschem.2011.11.020