High-Performance hbox In 0.7 hbox Ga 0.3 hbox As -Channel MOSFETs With High- kappa Gate Dielectrics and alpha -Si Passivation

Long and short buried-channel In sub(0.7)Ga sub(0.3)As MOSFETs with and without alpha-Si passivation are demonstrated. Devices with alpha-Si passivation show much higher transconductance and an effective peak mobility of 3810 cm super(2)/ V middots. Short-channel MOSFETs with a gate length of 160 nm display a current of 825 muA/mum at Vg - Vt = 1.6 V and peak transconductance of 715 muS/mum. In addition, the virtual source velocity extracted from the short-channel devices is 1.4-1.7 times higher than that of Si MOSFETs. These results indicate that the high-performance In sub(0.7)Ga sub(0.3) As-channel MOSFETs passivated by an alpha -Si layer are promising candidates for advanced post-Si CMOS applications.