In Flight SEU/MCU Sensitivity of Commercial Nanometric SRAMs: Operational Estimations

In Flight SEU/MCU Sensitivity of Commercial Nanometric SRAMs: Operational Estimations

A method and the corresponding platform devoted to operational SEE-rate prediction are presented and illustrated by experimental results. Predicted error-rates are in well agreement with results issued from the activation of an SRAM platform, in 90 nm technology node, on board stratospheric balloons...

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Veröffentlicht in:IEEE transactions on nuclear science 2011-12, Vol.58 (6), p.2644-2651
Hauptverfasser: Artola, L., Velazco, R., Hubert, G., Duzellier, S., Nuns, T., Guerard, B., Peronnard, P., Mansour, W., Pancher, F., Bezerra, F.
Format: Artikel
Sprache:eng
Schlagworte:
Activation
Balloon flight
Engineering Sciences
Experimental cross-section measurement
in flight experiment
Integrated circuit modeling
Ionization
Micro and nanotechnologies
Microelectronics
multiple Cell Upset
Neutrons
operational prediction
Platforms
Protons
Sensitivity
Single event upset
SRAM chips
Static random access memory
Testing
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Beschreibung
Zusammenfassung:A method and the corresponding platform devoted to operational SEE-rate prediction are presented and illustrated by experimental results. Predicted error-rates are in well agreement with results issued from the activation of an SRAM platform, in 90 nm technology node, on board stratospheric balloons flights. Direct ionization of protons is investigated for a 65 SRAM memory virtually boarded on the balloon flight.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2011.2172220