1/f noise in proton-irradiated SiGe HBTs

Investigates the impact of proton irradiation on the 1/f noise in ultra-high-voltage chemical-vapor deposition SiGe heterojunction bipolar transistors. The relative degradation of 1/f noise shows a strong dependence on device geometry. Both the geometry dependence and the bias dependence of 1/f nois...

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Veröffentlicht in:	IEEE transactions on nuclear science 2001-12, Vol.48 (6), p.2244-2249
Hauptverfasser:	Zhenrong Jin, Guofu Niu, Cressler, J.D., Marshall, C.J., Marshall, P.W., Kim, H.S., Reed, R.A., Harame, D.L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Circuit noise Current measurement Degradation Deposition Devices Equivalent circuits Fluctuations Germanium silicon alloys Heterojunction bipolar transistors Low-frequency noise Noise Noise measurement Proton irradiation Semiconductor devices Silicon germanides Silicon germanium
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Beschreibung
Zusammenfassung:	Investigates the impact of proton irradiation on the 1/f noise in ultra-high-voltage chemical-vapor deposition SiGe heterojunction bipolar transistors. The relative degradation of 1/f noise shows a strong dependence on device geometry. Both the geometry dependence and the bias dependence of 1/f noise change significantly after exposure to 2/spl times/10/sup 13/ p/cm/sup 2/ protons. An expression describing the 1/f noise is derived and used to explain the experimental observations.
ISSN:	0018-9499 1558-1578
DOI:	10.1109/23.983203