Universal-Vdd 0.65-2.0-V 32-kB cache using a voltage-adapted timing-generation scheme and a lithographically symmetrical cell
Gespeichert in:
Veröffentlicht in: | IEEE journal of solid-state circuits 2001-11, Vol.36 (11), p.1738 |
---|---|
Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | 11 |
container_start_page | 1738 |
container_title | IEEE journal of solid-state circuits |
container_volume | 36 |
creator | Osada, K Shin, Jinuk Luke Khan, M Liou, Y Wang, K Shoji, K Kuroda, K Ikeda, S Ishibashi, K |
description | |
doi_str_mv | 10.1109/4.962296 |
format | Article |
fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_996687583</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2633052951</sourcerecordid><originalsourceid>FETCH-proquest_journals_9966875833</originalsourceid><addsrcrecordid>eNqNistKxDAUQIMoWB_gJ1zcpybpY5KtovgB4-BuuDTXNmOa1iQdmIX_bgU_wNXhcA5jd1KUUgrzUJemVcq0Z6yQTaO53FTv56wQQmpulBCX7Cqlw6p1rWXBvt-CO1JM6PnOWhBl23BVCr6DSvHPR-iwGwiW5EIPCMfJZ-yJo8U5k4XsxjXwngJFzG4KkNZ9JMBg1927PEx9xHlwHXp_gnQaR8rx16Aj72_YxQf6RLd_vGb3L8_bp1c-x-lroZT3h2mJYU17Y9pWbxpdVf-afgBo8FHw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>996687583</pqid></control><display><type>article</type><title>Universal-Vdd 0.65-2.0-V 32-kB cache using a voltage-adapted timing-generation scheme and a lithographically symmetrical cell</title><source>IEEE Electronic Library (IEL)</source><creator>Osada, K ; Shin, Jinuk Luke ; Khan, M ; Liou, Y ; Wang, K ; Shoji, K ; Kuroda, K ; Ikeda, S ; Ishibashi, K</creator><creatorcontrib>Osada, K ; Shin, Jinuk Luke ; Khan, M ; Liou, Y ; Wang, K ; Shoji, K ; Kuroda, K ; Ikeda, S ; Ishibashi, K</creatorcontrib><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/4.962296</identifier><language>eng</language><publisher>New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</publisher><ispartof>IEEE journal of solid-state circuits, 2001-11, Vol.36 (11), p.1738</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2001</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Osada, K</creatorcontrib><creatorcontrib>Shin, Jinuk Luke</creatorcontrib><creatorcontrib>Khan, M</creatorcontrib><creatorcontrib>Liou, Y</creatorcontrib><creatorcontrib>Wang, K</creatorcontrib><creatorcontrib>Shoji, K</creatorcontrib><creatorcontrib>Kuroda, K</creatorcontrib><creatorcontrib>Ikeda, S</creatorcontrib><creatorcontrib>Ishibashi, K</creatorcontrib><title>Universal-Vdd 0.65-2.0-V 32-kB cache using a voltage-adapted timing-generation scheme and a lithographically symmetrical cell</title><title>IEEE journal of solid-state circuits</title><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNqNistKxDAUQIMoWB_gJ1zcpybpY5KtovgB4-BuuDTXNmOa1iQdmIX_bgU_wNXhcA5jd1KUUgrzUJemVcq0Z6yQTaO53FTv56wQQmpulBCX7Cqlw6p1rWXBvt-CO1JM6PnOWhBl23BVCr6DSvHPR-iwGwiW5EIPCMfJZ-yJo8U5k4XsxjXwngJFzG4KkNZ9JMBg1927PEx9xHlwHXp_gnQaR8rx16Aj72_YxQf6RLd_vGb3L8_bp1c-x-lroZT3h2mJYU17Y9pWbxpdVf-afgBo8FHw</recordid><startdate>20011101</startdate><enddate>20011101</enddate><creator>Osada, K</creator><creator>Shin, Jinuk Luke</creator><creator>Khan, M</creator><creator>Liou, Y</creator><creator>Wang, K</creator><creator>Shoji, K</creator><creator>Kuroda, K</creator><creator>Ikeda, S</creator><creator>Ishibashi, K</creator><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20011101</creationdate><title>Universal-Vdd 0.65-2.0-V 32-kB cache using a voltage-adapted timing-generation scheme and a lithographically symmetrical cell</title><author>Osada, K ; Shin, Jinuk Luke ; Khan, M ; Liou, Y ; Wang, K ; Shoji, K ; Kuroda, K ; Ikeda, S ; Ishibashi, K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_9966875833</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Osada, K</creatorcontrib><creatorcontrib>Shin, Jinuk Luke</creatorcontrib><creatorcontrib>Khan, M</creatorcontrib><creatorcontrib>Liou, Y</creatorcontrib><creatorcontrib>Wang, K</creatorcontrib><creatorcontrib>Shoji, K</creatorcontrib><creatorcontrib>Kuroda, K</creatorcontrib><creatorcontrib>Ikeda, S</creatorcontrib><creatorcontrib>Ishibashi, K</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Osada, K</au><au>Shin, Jinuk Luke</au><au>Khan, M</au><au>Liou, Y</au><au>Wang, K</au><au>Shoji, K</au><au>Kuroda, K</au><au>Ikeda, S</au><au>Ishibashi, K</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Universal-Vdd 0.65-2.0-V 32-kB cache using a voltage-adapted timing-generation scheme and a lithographically symmetrical cell</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><date>2001-11-01</date><risdate>2001</risdate><volume>36</volume><issue>11</issue><spage>1738</spage><pages>1738-</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><cop>New York</cop><pub>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</pub><doi>10.1109/4.962296</doi></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0018-9200 |
ispartof | IEEE journal of solid-state circuits, 2001-11, Vol.36 (11), p.1738 |
issn | 0018-9200 1558-173X |
language | eng |
recordid | cdi_proquest_journals_996687583 |
source | IEEE Electronic Library (IEL) |
title | Universal-Vdd 0.65-2.0-V 32-kB cache using a voltage-adapted timing-generation scheme and a lithographically symmetrical cell |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-20T20%3A15%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Universal-Vdd%200.65-2.0-V%2032-kB%20cache%20using%20a%20voltage-adapted%20timing-generation%20scheme%20and%20a%20lithographically%20symmetrical%20cell&rft.jtitle=IEEE%20journal%20of%20solid-state%20circuits&rft.au=Osada,%20K&rft.date=2001-11-01&rft.volume=36&rft.issue=11&rft.spage=1738&rft.pages=1738-&rft.issn=0018-9200&rft.eissn=1558-173X&rft_id=info:doi/10.1109/4.962296&rft_dat=%3Cproquest%3E2633052951%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=996687583&rft_id=info:pmid/&rfr_iscdi=true |