Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

An excellent cutoff frequency (f/sub t/) as high as 400 GHz was successfully realized in 45-nm-gate pseudomorphic InGaAs/InAlAs high electron mobility transistors (HEMTs). An additional vertical gate-recess suppressed short-channel effects, while keeping good pinchoff characteristics. Gate length (L...

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Veröffentlicht in:	IEEE electron device letters 2001-11, Vol.22 (11), p.507-509
Hauptverfasser:	Shinohara, K., Yamashita, Y., Endoh, A., Hikosaka, K., Matsui, T., Mimura, T., Hiyamizu, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge carrier density Cutoff frequency Devices Electron mobility Fabrication Gates HEMTs High electron mobility transistors Indium compounds Indium gallium arsenide Indium gallium arsenides Indium phosphide MODFETs Saturation Semiconductor devices Transistors Transit time Wet etching
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