Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

An excellent cutoff frequency (f/sub t/) as high as 400 GHz was successfully realized in 45-nm-gate pseudomorphic InGaAs/InAlAs high electron mobility transistors (HEMTs). An additional vertical gate-recess suppressed short-channel effects, while keeping good pinchoff characteristics. Gate length (L...

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Veröffentlicht in:IEEE electron device letters 2001-11, Vol.22 (11), p.507-509
Hauptverfasser: Shinohara, K., Yamashita, Y., Endoh, A., Hikosaka, K., Matsui, T., Mimura, T., Hiyamizu, S.
Format: Artikel
Sprache:eng
Schlagworte:
Charge carrier density
Cutoff frequency
Devices
Electron mobility
Fabrication
Gates
HEMTs
High electron mobility transistors
Indium compounds
Indium gallium arsenide
Indium gallium arsenides
Indium phosphide
MODFETs
Saturation
Semiconductor devices
Transistors
Transit time
Wet etching
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Beschreibung
Zusammenfassung:An excellent cutoff frequency (f/sub t/) as high as 400 GHz was successfully realized in 45-nm-gate pseudomorphic InGaAs/InAlAs high electron mobility transistors (HEMTs). An additional vertical gate-recess suppressed short-channel effects, while keeping good pinchoff characteristics. Gate length (L/sub g/) dependence of electron transit time (/spl tau//sub transit/) implied an increased saturation velocity (/spl upsi//sub s/) of 3.6/spl times/10/sup 7/ cm/s in the developed pseudomorphic HEMTs. This f/sub t/ is the highest value ever reported for any transistors to date.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.962645