A high density 4 kA/cm2 Nb integrated circuit process

Improved photoresist and dry etch processes have reduced critical dimension (CD) variation and improved CD linearity to below 1 Î¼m. These improvements have enabled a substantial reduction in feature size and full utilization of existing photolithography and etch tools.

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Bibliographische Detailangaben
Hauptverfasser:	KERBER, George L, ABELSON, Lynn A, LEUNG, Michael L, HERR, Quentin P, JOHNSON, Mark W
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Digital circuits Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Integrated circuits Semiconductors
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Improved photoresist and dry etch processes have reduced critical dimension (CD) variation and improved CD linearity to below 1 Î¼m. These improvements have enabled a substantial reduction in feature size and full utilization of existing photolithography and etch tools.
ISSN:	1051-8223 1558-2515
DOI:	10.1109/77.919530