Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs

Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs

Gamma-ray irradiation and post-irradiation responses have been studied for the two types of radiation sensitive p-channel MOSFETs (RADFETs) from different manufacturers. In addition to, in dosimetric applications standard, threshold voltage measurements at a single specified current, transistor I-V...

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Veröffentlicht in:IEEE transactions on nuclear science 2002-06, Vol.49 (3), p.1356-1363
Hauptverfasser: Jaksic, A., Ristic, G., Pejovic, M., Mohammadzadeh, A., Sudre, C., Lane, W.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Borders
Charge pumps
Current measurement
Devices
Electron traps
Irradiation
Manufacturing
Measurement standards
Monitoring
MOSFETs
Oxides
Switching
Threshold voltage
Voltage measurement
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Beschreibung
Zusammenfassung:Gamma-ray irradiation and post-irradiation responses have been studied for the two types of radiation sensitive p-channel MOSFETs (RADFETs) from different manufacturers. In addition to, in dosimetric applications standard, threshold voltage measurements at a single specified current, transistor I-V and charge-pumping characteristics have been monitored. This has been shown to be useful in providing a more detailed insight into processes that occur during irradiation and subsequent annealing at elevated temperature. In particular, the role of switching oxide traps (also known as "border" traps) and electron traps in studied devices has been revealed.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2002.1039667