Random telegraph signals in a radiation-hardened CMOS active pixel sensor

Random telegraph signals in a radiation-hardened CMOS active pixel sensor

The random telegraph signal (RTS) behavior of the dark current has been studied in a radiation-hardened CMOS active pixel sensor (APS). Several devices have been irradiated with protons of different energies and up to different fluences. The influence of the proton energy, fluence, and operating tem...

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Veröffentlicht in:IEEE transactions on nuclear science 2002-02, Vol.49 (1), p.249-257
Hauptverfasser: Bogaerts, J., Dierickx, B., Mertens, R.
Format: Artikel
Sprache:eng
Schlagworte:
Calibration
CMOS image sensors
Current measurement
Dark current
Fluctuations
Protons
Switches
Telegraphy
Temperature dependence
Temperature sensors
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Zusammenfassung:The random telegraph signal (RTS) behavior of the dark current has been studied in a radiation-hardened CMOS active pixel sensor (APS). Several devices have been irradiated with protons of different energies and up to different fluences. The influence of the proton energy, fluence, and operating temperature on the amplitude, time constants, and occurrence of the RTS is investigated. Mechanisms for this behavior are discussed and several suggestions are made for possible defect types.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2002.998649