Silicon film thickness considerations in SOI-DTMOS

Silicon film thickness considerations in SOI-DTMOS

We study the body effect in silicon-on-insulator (SDI) devices to determine if enhanced drive currents can be obtained with a body bias equal to the supply voltage. We find that significantly enhanced drive currents are observed only when the film thickness is sufficiently large. We explain this phe...

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Veröffentlicht in:IEEE electron device letters 2002-05, Vol.23 (5), p.276-278
Hauptverfasser: Sivaram, P., Anand, B., Desai, M.P.
Format: Artikel
Sprache:eng
Schlagworte:
Criteria
Devices
Electric potential
Film thickness
MOS devices
MOSFETs
Parasitic capacitance
Semiconductor films
Silicon films
Silicon on insulator technology
Simulation
Substrates
Thick films
Thin film devices
Threshold voltage
Two dimensional displays
Voltage
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Beschreibung
Zusammenfassung:We study the body effect in silicon-on-insulator (SDI) devices to determine if enhanced drive currents can be obtained with a body bias equal to the supply voltage. We find that significantly enhanced drive currents are observed only when the film thickness is sufficiently large. We explain this phenomenon using two-dimensional (2-D) device simulations and conclude that a film thickness greater than 100 nm is required. This sets a criterion for SOI devices to be used as dynamic threshold MOSFETs.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.998875