Study of the Phenomena of Transport in the Hg^sub 0.8^Cd^sub 0.2^Te Substrate of n-type by the Monte Carlo Method

Study of the Phenomena of Transport in the Hg^sub 0.8^Cd^sub 0.2^Te Substrate of n-type by the Monte Carlo Method

The microelectronic comprehension of the phenomena which describes the behavior of the carriers in semiconductor materials requires the knowledge of energy distribution function. This distribution function is obtained by the resolution of Boltzmann equation which is very hard to solve analytically....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Sensors & transducers 2012-02, Vol.137 (2), p.115
Hauptverfasser: Hassane, Moughli, Abderrahmane, Belghachi, Mebarka, Daoudi
Format: Artikel
Sprache:eng
Schlagworte:
Crystal lattices
Monte Carlo simulation
Partial differential equations
Studies
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 2
container_start_page 115
container_title Sensors & transducers
container_volume 137
creator Hassane, Moughli
Abderrahmane, Belghachi
Mebarka, Daoudi
description The microelectronic comprehension of the phenomena which describes the behavior of the carriers in semiconductor materials requires the knowledge of energy distribution function. This distribution function is obtained by the resolution of Boltzmann equation which is very hard to solve analytically. Many methods based on modeling are actually successfully used to solve this equation. The Monte Carlo method is among the most methods used for studying electronics components operations. It consists to follow the evolution of electron packets in real space, where each electron subjected to the electric field present in material goes interact with the crystal lattice. By applying this method to material Hg^sub 0.8^Cd^sub 0.2^Te the authors have described the behavior of the carriers from dynamic and energetic point of view (speed and energy variation according to the field). The simulation is applied, taking into account variation of the carriers as a function of the time in the non stationary mode, the effect of temperature, and doping concentration.
format Article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_930997295</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2614924581</sourcerecordid><originalsourceid>FETCH-proquest_journals_9309972953</originalsourceid><addsrcrecordid>eNqNi80KgkAYRYcoSMp3GNob45iOs5aijRDo2hjxKxOb0flZ-PZZ-ACt7uWee1bICxlNgvjE-Bp5NCJJkMZhvEW-MR0hJCSMcUo8NBbWNRNWD2xbwLcWpHqDFN-h1EKaQWmLX_JHr8_KuBqTY1plzVJpVQIuXG2sFha-mgzsNACup5-TKznPmdC9wjnYVjV7tHmI3oC_5A4dLucyuwaDVqMDY--dclrO6M4jwjmjPI7-On0A-mpKRw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>930997295</pqid></control><display><type>article</type><title>Study of the Phenomena of Transport in the Hg^sub 0.8^Cd^sub 0.2^Te Substrate of n-type by the Monte Carlo Method</title><source>EZB-FREE-00999 freely available EZB journals</source><source>Alma/SFX Local Collection</source><creator>Hassane, Moughli ; Abderrahmane, Belghachi ; Mebarka, Daoudi</creator><creatorcontrib>Hassane, Moughli ; Abderrahmane, Belghachi ; Mebarka, Daoudi</creatorcontrib><description>The microelectronic comprehension of the phenomena which describes the behavior of the carriers in semiconductor materials requires the knowledge of energy distribution function. This distribution function is obtained by the resolution of Boltzmann equation which is very hard to solve analytically. Many methods based on modeling are actually successfully used to solve this equation. The Monte Carlo method is among the most methods used for studying electronics components operations. It consists to follow the evolution of electron packets in real space, where each electron subjected to the electric field present in material goes interact with the crystal lattice. By applying this method to material Hg^sub 0.8^Cd^sub 0.2^Te the authors have described the behavior of the carriers from dynamic and energetic point of view (speed and energy variation according to the field). The simulation is applied, taking into account variation of the carriers as a function of the time in the non stationary mode, the effect of temperature, and doping concentration.</description><identifier>ISSN: 2306-8515</identifier><identifier>EISSN: 1726-5479</identifier><language>eng</language><publisher>Toronto: IFSA Publishing, S.L</publisher><subject>Crystal lattices ; Monte Carlo simulation ; Partial differential equations ; Studies</subject><ispartof>Sensors &amp; transducers, 2012-02, Vol.137 (2), p.115</ispartof><rights>Copyright International Frequency Sensor Association Feb 2012</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784</link.rule.ids></links><search><creatorcontrib>Hassane, Moughli</creatorcontrib><creatorcontrib>Abderrahmane, Belghachi</creatorcontrib><creatorcontrib>Mebarka, Daoudi</creatorcontrib><title>Study of the Phenomena of Transport in the Hg^sub 0.8^Cd^sub 0.2^Te Substrate of n-type by the Monte Carlo Method</title><title>Sensors &amp; transducers</title><description>The microelectronic comprehension of the phenomena which describes the behavior of the carriers in semiconductor materials requires the knowledge of energy distribution function. This distribution function is obtained by the resolution of Boltzmann equation which is very hard to solve analytically. Many methods based on modeling are actually successfully used to solve this equation. The Monte Carlo method is among the most methods used for studying electronics components operations. It consists to follow the evolution of electron packets in real space, where each electron subjected to the electric field present in material goes interact with the crystal lattice. By applying this method to material Hg^sub 0.8^Cd^sub 0.2^Te the authors have described the behavior of the carriers from dynamic and energetic point of view (speed and energy variation according to the field). The simulation is applied, taking into account variation of the carriers as a function of the time in the non stationary mode, the effect of temperature, and doping concentration.</description><subject>Crystal lattices</subject><subject>Monte Carlo simulation</subject><subject>Partial differential equations</subject><subject>Studies</subject><issn>2306-8515</issn><issn>1726-5479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNqNi80KgkAYRYcoSMp3GNob45iOs5aijRDo2hjxKxOb0flZ-PZZ-ACt7uWee1bICxlNgvjE-Bp5NCJJkMZhvEW-MR0hJCSMcUo8NBbWNRNWD2xbwLcWpHqDFN-h1EKaQWmLX_JHr8_KuBqTY1plzVJpVQIuXG2sFha-mgzsNACup5-TKznPmdC9wjnYVjV7tHmI3oC_5A4dLucyuwaDVqMDY--dclrO6M4jwjmjPI7-On0A-mpKRw</recordid><startdate>20120201</startdate><enddate>20120201</enddate><creator>Hassane, Moughli</creator><creator>Abderrahmane, Belghachi</creator><creator>Mebarka, Daoudi</creator><general>IFSA Publishing, S.L</general><scope>3V.</scope><scope>4T-</scope><scope>4U-</scope><scope>7SP</scope><scope>7XB</scope><scope>88I</scope><scope>88K</scope><scope>8AL</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BFMQW</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>CLZPN</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JQ2</scope><scope>K7-</scope><scope>L6V</scope><scope>L7M</scope><scope>M0N</scope><scope>M2P</scope><scope>M2T</scope><scope>M7S</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0W</scope></search><sort><creationdate>20120201</creationdate><title>Study of the Phenomena of Transport in the Hg^sub 0.8^Cd^sub 0.2^Te Substrate of n-type by the Monte Carlo Method</title><author>Hassane, Moughli ; Abderrahmane, Belghachi ; Mebarka, Daoudi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_9309972953</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Crystal lattices</topic><topic>Monte Carlo simulation</topic><topic>Partial differential equations</topic><topic>Studies</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hassane, Moughli</creatorcontrib><creatorcontrib>Abderrahmane, Belghachi</creatorcontrib><creatorcontrib>Mebarka, Daoudi</creatorcontrib><collection>ProQuest Central (Corporate)</collection><collection>Docstoc</collection><collection>University Readers</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>Telecommunications (Alumni Edition)</collection><collection>Computing Database (Alumni Edition)</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Materials Science &amp; Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies &amp; Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Continental Europe Database</collection><collection>Technology Collection (ProQuest)</collection><collection>ProQuest One Community College</collection><collection>Latin America &amp; Iberia Database</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Computer Science Collection</collection><collection>Computer Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computing Database</collection><collection>Science Database (ProQuest)</collection><collection>Telecommunications Database</collection><collection>Engineering Database</collection><collection>Advanced Technologies &amp; Aerospace Database</collection><collection>ProQuest Advanced Technologies &amp; Aerospace Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>DELNET Engineering &amp; Technology Collection</collection><jtitle>Sensors &amp; transducers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hassane, Moughli</au><au>Abderrahmane, Belghachi</au><au>Mebarka, Daoudi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study of the Phenomena of Transport in the Hg^sub 0.8^Cd^sub 0.2^Te Substrate of n-type by the Monte Carlo Method</atitle><jtitle>Sensors &amp; transducers</jtitle><date>2012-02-01</date><risdate>2012</risdate><volume>137</volume><issue>2</issue><spage>115</spage><pages>115-</pages><issn>2306-8515</issn><eissn>1726-5479</eissn><abstract>The microelectronic comprehension of the phenomena which describes the behavior of the carriers in semiconductor materials requires the knowledge of energy distribution function. This distribution function is obtained by the resolution of Boltzmann equation which is very hard to solve analytically. Many methods based on modeling are actually successfully used to solve this equation. The Monte Carlo method is among the most methods used for studying electronics components operations. It consists to follow the evolution of electron packets in real space, where each electron subjected to the electric field present in material goes interact with the crystal lattice. By applying this method to material Hg^sub 0.8^Cd^sub 0.2^Te the authors have described the behavior of the carriers from dynamic and energetic point of view (speed and energy variation according to the field). The simulation is applied, taking into account variation of the carriers as a function of the time in the non stationary mode, the effect of temperature, and doping concentration.</abstract><cop>Toronto</cop><pub>IFSA Publishing, S.L</pub><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 2306-8515
ispartof Sensors & transducers, 2012-02, Vol.137 (2), p.115
issn 2306-8515
1726-5479
language eng
recordid cdi_proquest_journals_930997295
source EZB-FREE-00999 freely available EZB journals; Alma/SFX Local Collection
subjects Crystal lattices
Monte Carlo simulation
Partial differential equations
Studies
title Study of the Phenomena of Transport in the Hg^sub 0.8^Cd^sub 0.2^Te Substrate of n-type by the Monte Carlo Method
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T17%3A31%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Study%20of%20the%20Phenomena%20of%20Transport%20in%20the%20Hg%5Esub%200.8%5ECd%5Esub%200.2%5ETe%20Substrate%20of%20n-type%20by%20the%20Monte%20Carlo%20Method&rft.jtitle=Sensors%20&%20transducers&rft.au=Hassane,%20Moughli&rft.date=2012-02-01&rft.volume=137&rft.issue=2&rft.spage=115&rft.pages=115-&rft.issn=2306-8515&rft.eissn=1726-5479&rft_id=info:doi/&rft_dat=%3Cproquest%3E2614924581%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=930997295&rft_id=info:pmid/&rfr_iscdi=true