Study of the Phenomena of Transport in the Hg^sub 0.8^Cd^sub 0.2^Te Substrate of n-type by the Monte Carlo Method
The microelectronic comprehension of the phenomena which describes the behavior of the carriers in semiconductor materials requires the knowledge of energy distribution function. This distribution function is obtained by the resolution of Boltzmann equation which is very hard to solve analytically....
Gespeichert in:
Veröffentlicht in: | Sensors & transducers 2012-02, Vol.137 (2), p.115 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The microelectronic comprehension of the phenomena which describes the behavior of the carriers in semiconductor materials requires the knowledge of energy distribution function. This distribution function is obtained by the resolution of Boltzmann equation which is very hard to solve analytically. Many methods based on modeling are actually successfully used to solve this equation. The Monte Carlo method is among the most methods used for studying electronics components operations. It consists to follow the evolution of electron packets in real space, where each electron subjected to the electric field present in material goes interact with the crystal lattice. By applying this method to material Hg^sub 0.8^Cd^sub 0.2^Te the authors have described the behavior of the carriers from dynamic and energetic point of view (speed and energy variation according to the field). The simulation is applied, taking into account variation of the carriers as a function of the time in the non stationary mode, the effect of temperature, and doping concentration. |
---|---|
ISSN: | 2306-8515 1726-5479 |