SUBBAND DIFFUSION MODELS FOR QUANTUM TRANSPORT IN A STRONG FORCE REGIME

We derive semiclassical approximations to quantum transport models in thin slabs with applications to SOI (silicon oxide on insulator)-type semiconductor devices via a subband approach. In the regime considered, the forces acting on the particles across the slab are much larger than the forces in th...

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Veröffentlicht in:SIAM journal on applied mathematics 2011-01, Vol.71 (6), p.1871-1895
1. Verfasser: RINGHOFER, C.
Format: Artikel
Sprache:eng
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Zusammenfassung:We derive semiclassical approximations to quantum transport models in thin slabs with applications to SOI (silicon oxide on insulator)-type semiconductor devices via a subband approach. In the regime considered, the forces acting on the particles across the slab are much larger than the forces in the lateral direction of the slab. In a semiclassical limit the transport picture can be described on large time scales by a system of subband convection-diffusion equations with an interband collision operator, modeling the transfer of mass (charge) between the different eigenspaces and driving the system towards a local Maxwellian equilibrium.
ISSN:0036-1399
1095-712X
DOI:10.1137/100804164