SUBBAND DIFFUSION MODELS FOR QUANTUM TRANSPORT IN A STRONG FORCE REGIME
We derive semiclassical approximations to quantum transport models in thin slabs with applications to SOI (silicon oxide on insulator)-type semiconductor devices via a subband approach. In the regime considered, the forces acting on the particles across the slab are much larger than the forces in th...
Gespeichert in:
Veröffentlicht in: | SIAM journal on applied mathematics 2011-01, Vol.71 (6), p.1871-1895 |
---|---|
1. Verfasser: | |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | We derive semiclassical approximations to quantum transport models in thin slabs with applications to SOI (silicon oxide on insulator)-type semiconductor devices via a subband approach. In the regime considered, the forces acting on the particles across the slab are much larger than the forces in the lateral direction of the slab. In a semiclassical limit the transport picture can be described on large time scales by a system of subband convection-diffusion equations with an interband collision operator, modeling the transfer of mass (charge) between the different eigenspaces and driving the system towards a local Maxwellian equilibrium. |
---|---|
ISSN: | 0036-1399 1095-712X |
DOI: | 10.1137/100804164 |