Observation of filament formation process of Cu/HfO2/Pt ReRAM structure by hard x-ray photoelectron spectroscopy under bias operation

We have demonstrated resistance switching using polycrystalline HfO2 film with a Cu top electrode for nonvolatile memory applications and revealed the Cu diffusion into the HfO2 layer during the filament formation process. Resistive switching was clearly observed in the Cu/HfO2/Pt structure by perfo...

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Veröffentlicht in:Journal of materials research 2012-03, Vol.27 (6), p.869-878
Hauptverfasser: Nagata, Takahiro, Haemori, Masamitsu, Yamashita, Yoshiyuki, Yoshikawa, Hideki, Kobayashi, Keisuke, Chikyow, Toyohiro
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Sprache:eng
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