Observation of filament formation process of Cu/HfO2/Pt ReRAM structure by hard x-ray photoelectron spectroscopy under bias operation
We have demonstrated resistance switching using polycrystalline HfO2 film with a Cu top electrode for nonvolatile memory applications and revealed the Cu diffusion into the HfO2 layer during the filament formation process. Resistive switching was clearly observed in the Cu/HfO2/Pt structure by perfo...
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Veröffentlicht in: | Journal of materials research 2012-03, Vol.27 (6), p.869-878 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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