A high-performance multichannel dual-gate poly-Si TFT fabricated by excimer laser irradiation on a floating a-Si thin film

A new excimer laser annealing (ELA) process that uses a floating amorphous-Silicon (a-Si) thin film with a multichannel structure is proposed for high-performance poly-Si thin-film transistors (TFTs). The proposed ELA method produces two-dimensional (2-D) grain growth, which can result in a high-qua...

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Veröffentlicht in:	IEEE electron device letters 2003-09, Vol.24 (9), p.580-582
Hauptverfasser:	Song, In-Hyuk, Kang, Su-Hyuk, Nam, Woo-Jin, Han, Min-Koo
Format:	Artikel
Sprache:	eng
Schlagworte:	Active matrix liquid crystal displays Active matrix organic light emitting diodes Annealing Excimer lasers Flat panel displays Floating structures Grain boundaries Grain size Grain structure Multichannel Semiconductor devices Substrates Temperature Thermal conductivity Thin film transistors Thin films
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