A high-performance multichannel dual-gate poly-Si TFT fabricated by excimer laser irradiation on a floating a-Si thin film

A high-performance multichannel dual-gate poly-Si TFT fabricated by excimer laser irradiation on a floating a-Si thin film

A new excimer laser annealing (ELA) process that uses a floating amorphous-Silicon (a-Si) thin film with a multichannel structure is proposed for high-performance poly-Si thin-film transistors (TFTs). The proposed ELA method produces two-dimensional (2-D) grain growth, which can result in a high-qua...

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Veröffentlicht in:IEEE electron device letters 2003-09, Vol.24 (9), p.580-582
Hauptverfasser: Song, In-Hyuk, Kang, Su-Hyuk, Nam, Woo-Jin, Han, Min-Koo
Format: Artikel
Sprache:eng
Schlagworte:
Active matrix liquid crystal displays
Active matrix organic light emitting diodes
Annealing
Excimer lasers
Flat panel displays
Floating structures
Grain boundaries
Grain size
Grain structure
Multichannel
Semiconductor devices
Substrates
Temperature
Thermal conductivity
Thin film transistors
Thin films
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Beschreibung
Zusammenfassung:A new excimer laser annealing (ELA) process that uses a floating amorphous-Silicon (a-Si) thin film with a multichannel structure is proposed for high-performance poly-Si thin-film transistors (TFTs). The proposed ELA method produces two-dimensional (2-D) grain growth, which can result in a high-quality grain structure. The dual-gate structure was employed to eliminate the grain boundaries perpendicular to the current flow in the channel. A multichannel structure was adapted in order to arrange the grain boundary to be parallel to the current flow. The proposed poly-Si TFT exhibits high-performance electrical characteristics, which are a high mobility of 504 cm/sup 2//Vsec and a low subthreshold slope of 0.337 V/dec.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2003.816586