Effect of grain size and doping level of SiC on the superconductivity and critical current density in MgB2 superconductor

Effect of grain size and doping level of SiC on the superconductivity and critical current density in MgB2 superconductor

SiC doped MgB2 polycrystalline samples were fabricated by in-situ reaction using different grain sizes (20 nm, 100 nm, and 37 μm) of SiC and different doping levels (0, 8, 10, 12, 15 wt%).

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Veröffentlicht in:IEEE transactions on applied superconductivity 2003-06, Vol.13 (2), p.3273-3276
Hauptverfasser: SAEID SOLTANIAN, XIAOLIN WANG, HORVAT, Joseph, MENGJUN QIN, HUAKUN LIU, MUNROE, Paul R, DOU, Shi X
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Connection and protection apparatus
Electrical engineering. Electrical power engineering
Exact sciences and technology
Grain size
Materials
Materials science
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Zusammenfassung:SiC doped MgB2 polycrystalline samples were fabricated by in-situ reaction using different grain sizes (20 nm, 100 nm, and 37 μm) of SiC and different doping levels (0, 8, 10, 12, 15 wt%).
ISSN:1051-8223
1558-2515
DOI:10.1109/TASC.2003.812223