Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR

A vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is realized with low-temperature molecular beam epitaxy by stacking two RITDs with a connecting backward diode between them. The current-voltage characteristics of the vertically integrated RITD pair demonstrates tw...

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Veröffentlicht in:	IEEE electron device letters 2004-09, Vol.25 (9), p.646-648
Hauptverfasser:	Niu Jin, Sung-Yong Chung, Heyns, R.M., Berger, P.R., Ronghua Yu, Thompson, P.E., Rommel, S.L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties CMOS technology Devices Digital circuits Diodes Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Heterojunction bipolar transistors Joining Joining processes Logic Molecular beam epitaxial growth Molecular beam epitaxy Multivalued logic Programmable logic arrays Resistors Resonance RLC circuits Semiconductor diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stacking Tunneling
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