Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR

Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR

A vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is realized with low-temperature molecular beam epitaxy by stacking two RITDs with a connecting backward diode between them. The current-voltage characteristics of the vertically integrated RITD pair demonstrates tw...

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Veröffentlicht in:IEEE electron device letters 2004-09, Vol.25 (9), p.646-648
Hauptverfasser: Niu Jin, Sung-Yong Chung, Heyns, R.M., Berger, P.R., Ronghua Yu, Thompson, P.E., Rommel, S.L.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Circuit properties
CMOS technology
Devices
Digital circuits
Diodes
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Heterojunction bipolar transistors
Joining
Joining processes
Logic
Molecular beam epitaxial growth
Molecular beam epitaxy
Multivalued logic
Programmable logic arrays
Resistors
Resonance
RLC circuits
Semiconductor diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stacking
Tunneling
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Zusammenfassung:A vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is realized with low-temperature molecular beam epitaxy by stacking two RITDs with a connecting backward diode between them. The current-voltage characteristics of the vertically integrated RITD pair demonstrates two sequential negative differential resistance regions in the forward-biasing condition. Tri-state logic is demonstrated by using the vertically integrated RITDs as the drive and an off-chip resistor as the load.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.833845