Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR
A vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is realized with low-temperature molecular beam epitaxy by stacking two RITDs with a connecting backward diode between them. The current-voltage characteristics of the vertically integrated RITD pair demonstrates tw...
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| Veröffentlicht in: | IEEE electron device letters 2004-09, Vol.25 (9), p.646-648 |
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| container_end_page | 648 |
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| container_issue | 9 |
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| container_title | IEEE electron device letters |
| container_volume | 25 |
| creator | Niu Jin Sung-Yong Chung Heyns, R.M. Berger, P.R. Ronghua Yu Thompson, P.E. Rommel, S.L. |
| description | A vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is realized with low-temperature molecular beam epitaxy by stacking two RITDs with a connecting backward diode between them. The current-voltage characteristics of the vertically integrated RITD pair demonstrates two sequential negative differential resistance regions in the forward-biasing condition. Tri-state logic is demonstrated by using the vertically integrated RITDs as the drive and an off-chip resistor as the load. |
| doi_str_mv | 10.1109/LED.2004.833845 |
| format | Article |
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The current-voltage characteristics of the vertically integrated RITD pair demonstrates two sequential negative differential resistance regions in the forward-biasing condition. Tri-state logic is demonstrated by using the vertically integrated RITDs as the drive and an off-chip resistor as the load.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2004.833845</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Circuit properties ; CMOS technology ; Devices ; Digital circuits ; Diodes ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Heterojunction bipolar transistors ; Joining ; Joining processes ; Logic ; Molecular beam epitaxial growth ; Molecular beam epitaxy ; Multivalued logic ; Programmable logic arrays ; Resistors ; Resonance ; RLC circuits ; Semiconductor diodes ; Semiconductor electronics. Microelectronics. Optoelectronics. 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(IEEE) 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c380t-ebdd87b32a50c1a6ffd93eb9047a1ab7ed24373b45f935c4a7f115189f48421c3</citedby><cites>FETCH-LOGICAL-c380t-ebdd87b32a50c1a6ffd93eb9047a1ab7ed24373b45f935c4a7f115189f48421c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1327722$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1327722$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16170973$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Niu Jin</creatorcontrib><creatorcontrib>Sung-Yong Chung</creatorcontrib><creatorcontrib>Heyns, R.M.</creatorcontrib><creatorcontrib>Berger, P.R.</creatorcontrib><creatorcontrib>Ronghua Yu</creatorcontrib><creatorcontrib>Thompson, P.E.</creatorcontrib><creatorcontrib>Rommel, S.L.</creatorcontrib><title>Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>A vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is realized with low-temperature molecular beam epitaxy by stacking two RITDs with a connecting backward diode between them. The current-voltage characteristics of the vertically integrated RITD pair demonstrates two sequential negative differential resistance regions in the forward-biasing condition. Tri-state logic is demonstrated by using the vertically integrated RITDs as the drive and an off-chip resistor as the load.</description><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>CMOS technology</subject><subject>Devices</subject><subject>Digital circuits</subject><subject>Diodes</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Heterojunction bipolar transistors</subject><subject>Joining</subject><subject>Joining processes</subject><subject>Logic</subject><subject>Molecular beam epitaxial growth</subject><subject>Molecular beam epitaxy</subject><subject>Multivalued logic</subject><subject>Programmable logic arrays</subject><subject>Resistors</subject><subject>Resonance</subject><subject>RLC circuits</subject><subject>Semiconductor diodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Stacking</topic><topic>Tunneling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Niu Jin</creatorcontrib><creatorcontrib>Sung-Yong Chung</creatorcontrib><creatorcontrib>Heyns, R.M.</creatorcontrib><creatorcontrib>Berger, P.R.</creatorcontrib><creatorcontrib>Ronghua Yu</creatorcontrib><creatorcontrib>Thompson, P.E.</creatorcontrib><creatorcontrib>Rommel, S.L.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Niu Jin</au><au>Sung-Yong Chung</au><au>Heyns, R.M.</au><au>Berger, P.R.</au><au>Ronghua Yu</au><au>Thompson, P.E.</au><au>Rommel, S.L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2004-09-01</date><risdate>2004</risdate><volume>25</volume><issue>9</issue><spage>646</spage><epage>648</epage><pages>646-648</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>A vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is realized with low-temperature molecular beam epitaxy by stacking two RITDs with a connecting backward diode between them. The current-voltage characteristics of the vertically integrated RITD pair demonstrates two sequential negative differential resistance regions in the forward-biasing condition. Tri-state logic is demonstrated by using the vertically integrated RITDs as the drive and an off-chip resistor as the load.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2004.833845</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2004-09, Vol.25 (9), p.646-648 |
| issn | 0741-3106 1558-0563 |
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| subjects | Applied sciences Circuit properties CMOS technology Devices Digital circuits Diodes Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Heterojunction bipolar transistors Joining Joining processes Logic Molecular beam epitaxial growth Molecular beam epitaxy Multivalued logic Programmable logic arrays Resistors Resonance RLC circuits Semiconductor diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stacking Tunneling |
| title | Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR |
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