Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate

Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate

In this letter, we report self-aligned n-channel germanium (Ge) MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate electrode. Excellent off-state current is achieved through the reduction of junction leakage. For the first time, we have demonstrated an n-channel Ge MOSFET with a sub...

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Veröffentlicht in:IEEE electron device letters 2004-03, Vol.25 (3), p.135-137
Hauptverfasser: Huiling Shang, Kam-Leung Lee, Kozlowski, P., D'Emic, C., Babich, I., Sikorski, E., Meikei Ieong, Wong, H.-S.P., Guarini, K., Haensch, W.
Format: Artikel
Sprache:eng
Schlagworte:
Devices
Dielectric devices
Dielectric losses
Dielectrics
Electrodes
Fabrication
Gates
Germanium
Leakage current
MOSFETs
Oxynitrides
Rapid thermal annealing
Semiconductor diodes
Temperature
Tungsten
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Zusammenfassung:In this letter, we report self-aligned n-channel germanium (Ge) MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate electrode. Excellent off-state current is achieved through the reduction of junction leakage. For the first time, we have demonstrated an n-channel Ge MOSFET with a subthreshold slope of 150 mV/dec and an on-off current ratio of /spl sim/10/sup 4/.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2003.823060