High-Performance Poly-Si Thin-Film Transistors With L-Fin Channels

For the first time, we construct poly-Si thin-film transistors (TFTs) with novel L-shaped poly-Si fin channels (poly-Si TFTs with L-fin channels, called LFin-TFTs). The L-fin channels of LFin-TFTs are similar to the multiple-gated fin channels of FinFETs. The LFin-TFTs exhibit a low supply gate volt...

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Veröffentlicht in:	IEEE electron device letters 2012-02, Vol.33 (2), p.215-217
Hauptverfasser:	LU, Yi-Hsien, KUO, Po-Yi, LIN, Je-Wei, WU, Yi-Hong, CHEN, Yi-Hsuan, CHAO, Tien-Sheng
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Channels Devices Electric potential Electronics Exact sciences and technology FinFETs hbox{NH}_{3} plasma L-fin Logic gates multiple gate Ni salicidation Nickel Plasmas poly-Si thin-film transistors (TFTs) Random access memory Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Thin film transistors Transistors Very large scale integration Voltage
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Zusammenfassung:	For the first time, we construct poly-Si thin-film transistors (TFTs) with novel L-shaped poly-Si fin channels (poly-Si TFTs with L-fin channels, called LFin-TFTs). The L-fin channels of LFin-TFTs are similar to the multiple-gated fin channels of FinFETs. The LFin-TFTs exhibit a low supply gate voltage (3 V), a good subthreshold swing (SS) ~ 190 mV/dec, and a high on/off current ratio (I ON /I OFF )>; 10 6 (V D =1 V) without hydrogen-related plasma treatments. After Ni salicidation, the devices exhibit steep SS ~ 148 mV/dec and I ON /I OFF ~ 10 7 . After NH 3 plasma treatment, the characteristics of the devices are further improved. The LFin-TFTs have steeper SS ~ 132 mV/dec, higher (I ON /I OFF )>; 10 7 , and threshold voltage (V TH ) ~ 0.036 V.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2011.2175357