Effects of la concentration on the texturing and the electrical properties of sol-gel derived PLT thin films

Lanthanum doped lead titanate (PLT) thin films consisting of different La concentrations were fabricated on Pt/Ti/SiO2/Si using sol-gel method. The films were dried at 440°C for 5 min and fired at 600°C using rapid thermal annealing (RTA) for 1min. The preferred orientation (texturing) and the morph...

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Veröffentlicht in:Metals and materials (Seoul, Korea) Korea), 1998-01, Vol.4 (1), p.83-87
Hauptverfasser: Choi, Chaun-Gi, Kim, Chang-Jung, Yoon, Dae-Sung, Lee, Joon-Sung, Lee, Won-Jong, No, Kwang-soo
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Sprache:eng
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Zusammenfassung:Lanthanum doped lead titanate (PLT) thin films consisting of different La concentrations were fabricated on Pt/Ti/SiO2/Si using sol-gel method. The films were dried at 440°C for 5 min and fired at 600°C using rapid thermal annealing (RTA) for 1min. The preferred orientation (texturing) and the morphology of the PLT film were changed with La concentration and a possible cause of the texturing has been discussed. The effects of La doping to the Lead titanate films on the dielectric constants, P-E hysteresis loop and pyroelectric coefficient were measured and discussed.
ISSN:1225-9438
1598-9623
2005-4149
DOI:10.1007/BF03026069