Simulation of Single and Multi-Node Collection: Impact on SEU Occurrence in Nanometric SRAM Cells

Simulation of Single and Multi-Node Collection: Impact on SEU Occurrence in Nanometric SRAM Cells

This paper presents the study of the multi collection phenomena in sub-micrometric SRAMs (90 and 65 nm bulk technologies). It compares the relative influence of nMOS and pMOS sensitive zones within the cell by means of electrical simulations. The impact on the definition of an event criterion is dis...

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Veröffentlicht in:IEEE transactions on nuclear science 2011-06, Vol.58 (3), p.862-869
Hauptverfasser: Toure, G, Hubert, G, Castellani-Coulie, K, Duzellier, S, Portal, J
Format: Artikel
Sprache:eng
Schlagworte:
Collection
Criteria
Engineering Sciences
Ions
Micro and nanotechnologies
Microelectronics
MOS devices
Multi collection mechanism
prediction
Protons
Random access memory
Simulation
single event upset
SPICE
SPICE modelling
SRAM
Static random access memory
Transient analysis
Transistors
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Beschreibung
Zusammenfassung:This paper presents the study of the multi collection phenomena in sub-micrometric SRAMs (90 and 65 nm bulk technologies). It compares the relative influence of nMOS and pMOS sensitive zones within the cell by means of electrical simulations. The impact on the definition of an event criterion is discussed.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2011.2110662