Tunnel Magnetoresistance Properties of Double MgO-Barrier Magnetic Tunnel Junctions With Different Free-Layer Alloy Compositions and Structures

We investigated tunnel magnetoresistance (TMR) properties in double MgO-barrier magnetic tunnel junctions (DMTJs) with (Co 25 Fe 75 ) 100-x B x free-layers with x = 15, 20, and 25 (in at.%) sputtered at different power. The TMR ratio of DMTJs increased with sputtering power, which is ascribed to the...

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Veröffentlicht in:	IEEE transactions on magnetics 2011-06, Vol.47 (6), p.1567-1570
Hauptverfasser:	Gan, Huadong, Ikeda, Shoji, Yamanouchi, Michihiko, Miura, Katsuya, Mizunuma, Kotaro, Hayakawa, Jun, Matsukura, Fumihiro, Ohno, Hideo
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Diffraction Iron Junctions Magnetic tunneling Magnetism MgO barrier Sputtering sputtering condition Surface layer Texture Tunnel junctions Tunnel magnetoresistance Tunneling magnetoresistance X-rays
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Zusammenfassung:	We investigated tunnel magnetoresistance (TMR) properties in double MgO-barrier magnetic tunnel junctions (DMTJs) with (Co 25 Fe 75 ) 100-x B x free-layers with x = 15, 20, and 25 (in at.%) sputtered at different power. The TMR ratio of DMTJs increased with sputtering power, which is ascribed to the B composition reduction in the CoFeB free-layer with increasing sputtering power. The x-ray diffraction measurement showed that crystallization into (001)-oriented texture of CoFeB film sandwiched between the two MgO-layers as well as an improvement of (001) orientation of top MgO-barrier are realized. The TMR ratio over 200% was obtained in DMTJs with a (Co 25 Fe 75 ) 85 B 15 free-layer sputtered at 0.88 and 1.77 W/cm 2 .
ISSN:	0018-9464 1941-0069
DOI:	10.1109/TMAG.2010.2104137