Simple Method for Extracting Effective Sheet Charge Density Along STI Sidewalls Due to Radiation

Simple Method for Extracting Effective Sheet Charge Density Along STI Sidewalls Due to Radiation

A first order model of radiation induced narrow-channel effect (RINCE) is developed by applying charge conservation principle to calculate threshold voltage shift due to total ionizing dose (TID) irradiation. The model provides a way for extracting effective sheet charge density along shallow trench...

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Veröffentlicht in:IEEE transactions on nuclear science 2011-06, Vol.58 (3), p.1332-1337
Hauptverfasser: Hu, Zhiyuan, Liu, Zhangli, Shao, Hua, Zhang, Zhengxuan, Ning, Bingxu, Chen, Ming, Bi, Dawei, Zou, Shichang
Format: Artikel
Sprache:eng
Schlagworte:
Charge
Charge density
CMOS devices
Conservation
Degradation
Irradiation
Logic gates
Mathematical models
MOSFETs
Radiation effects
RINCE
sheet charge density
Substrates
Threshold voltage
total dose effects
Trenches
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Beschreibung
Zusammenfassung:A first order model of radiation induced narrow-channel effect (RINCE) is developed by applying charge conservation principle to calculate threshold voltage shift due to total ionizing dose (TID) irradiation. The model provides a way for extracting effective sheet charge density along shallow trench isolation (STI) sidewalls.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2011.2142323