A New Edge Termination Technique for High-Voltage Devices in 4H-SiC-Multiple-Floating-Zone Junction Termination Extension

A new edge termination method, referred to as multiple-floating-zone junction termination extension (MFZ-JTE), is presented for high-voltage devices in 4H-SiC. 4H-SiC PiN rectifiers with a breakdown voltage of 10 kV (about 88% of the theoretical value) were fabricated using MFZ-JTEs. The MFZ-JTE tec...

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Veröffentlicht in:	IEEE electron device letters 2011-07, Vol.32 (7), p.880-882
Hauptverfasser:	Woongje Sung, Van Brunt, E., Baliga, B. J., Huang, A. Q.
Format:	Artikel
Sprache:	eng
Schlagworte:	4H-SiC Activation Aluminum Annealing Applied sciences Boron Breakdown Devices Diodes Edge termination Electric potential Electronics Exact sciences and technology Implantation Implants junction termination extension (JTE) Junctions Latitude Periodic structures PiN diode Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon carbide Voltage
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Zusammenfassung:	A new edge termination method, referred to as multiple-floating-zone junction termination extension (MFZ-JTE), is presented for high-voltage devices in 4H-SiC. 4H-SiC PiN rectifiers with a breakdown voltage of 10 kV (about 88% of the theoretical value) were fabricated using MFZ-JTEs. The MFZ-JTE technique only requires a single pattern-and-implant step while providing significant process latitude for parameter variations such as implantation dose and activation anneal condition.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2011.2144561