A 96% Efficient High-Frequency DC-DC Converter Using E-Mode GaN DHFETs on Si

III-Nitride materials are very promising to be used in next-generation high-frequency power switching applications. In this letter, we demonstrate the performance of normally off AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs) using a boost-converter circuit. The figures of merit of our large (...

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Veröffentlicht in:	IEEE electron device letters 2011-10, Vol.32 (10), p.1370-1372
Hauptverfasser:	Das, J., Everts, J., Van Den Keybus, J., Van Hove, M., Visalli, D., Srivastava, P., Marcon, D., Kai Cheng, Leys, M., Decoutere, S., Driesen, J., Borghs, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Aluminum gallium nitrides Applied sciences Circuit properties Circuits Converters Devices DH-HEMTs efficiency Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gallium nitride Gallium nitrides GaN high voltage Logic gates Other multijunction devices. Power transistors. Thyristors power field-effect transistors (FETs) Power loss Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal convertors Silicon SPICE Switches Switching Transistors Voltage measurement
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Zusammenfassung:	III-Nitride materials are very promising to be used in next-generation high-frequency power switching applications. In this letter, we demonstrate the performance of normally off AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs) using a boost-converter circuit. The figures of merit of our large (57.6-mm gate width) GaN transistor are presented: R ON * Q G of 2.5 Ω·nC is obtained at V DS = 140 V. The switching performance of the GaN DHFET is studied in a dedicated high-frequency boost converter: both the switching times and power losses are characterized. We show converter efficiency values up to 96.1% at 500 kHz and 93.9% at 850 kHz at output power of 100 W.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2011.2162393