High-Performance Twin Silicon Nanowire MOSFET (TSNWFET) on Bulk Si Wafer

A gate-all-around (GAA) twin silicon nanowire MOSFET (TSNWFET) with 5-nm-radius channels on a bulk Si wafer is successfully fabricated to achieve extremely high-drive currents of 2.37 mA/ mum for n-channel and 1.30 mA/ mum for p-channel TSNWFETs with mid-gap TiN metal gate that are normalized by a n...

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Veröffentlicht in:	IEEE transactions on nanotechnology 2008-03, Vol.7 (2), p.181-184
Hauptverfasser:	Suk, Sung Dae, Yeo, Kyoung Hwan, Cho, Keun Hwi, Li, Ming, Yeoh, Yun Young, Lee, Sung-Young, Kim, Sung Min, Yoon, Eun Jung, Kim, Min Sang, Oh, Chang Woo, Kim, Sung Hwan, Kim, Dong-Won, Park, Donggun
Format:	Artikel
Sprache:	eng
Schlagworte:	5 nm Annealing Bulk MOSFET Channels Etching gate all around (GAA) Gates Germanium silicon alloys high performance Hydrogen MOSFET MOSFET circuits MOSFETs Nanocomposites Nanomaterials Nanostructure nanowire Nanowires Shape Silicon Silicon compounds Silicon germanium Tin Transistors TSNWFET twin silicon nanowire Wafers
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Beschreibung
Zusammenfassung:	A gate-all-around (GAA) twin silicon nanowire MOSFET (TSNWFET) with 5-nm-radius channels on a bulk Si wafer is successfully fabricated to achieve extremely high-drive currents of 2.37 mA/ mum for n-channel and 1.30 mA/ mum for p-channel TSNWFETs with mid-gap TiN metal gate that are normalized by a nanowire diameter. It also shows good short-channel effects immunity down to 30-nm gate length due to the GAA structure and the nanowire channel. The effect of bottom parasitic transistor in TSNWFET is also investigated.
ISSN:	1536-125X 1941-0085
DOI:	10.1109/TNANO.2008.917843