Introduction to the Special Issue on GaN and Related Nitride Compound Device Reliability

Introduction to the Special Issue on GaN and Related Nitride Compound Device Reliability

The 23 papers in this special issue focus on gallium nitride and related nitride compounds device reliability. The main emphasis in this issue is on the reliability of HFETs and LEDs.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on device and materials reliability 2008-06, Vol.8 (2), p.239-239
Hauptverfasser: Christou, Aris, Fantini, Fausto
Format: Magazinearticle
Sprache:eng
Schlagworte:
Aluminum gallium nitride
Electric breakdown
Frequency
Gallium arsenide
Gallium nitride
HEMTs
Microwave devices
Photonic band gap
Special issues and sections
Thermal conductivity
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Zusammenfassung:The 23 papers in this special issue focus on gallium nitride and related nitride compounds device reliability. The main emphasis in this issue is on the reliability of HFETs and LEDs.
ISSN:1530-4388
1558-2574
DOI:10.1109/TDMR.2008.925989